IRFHM8330TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFHM8330TRPBF is a IRFHM8330TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 6.6mΩ@20A,10V 2.35V@25uA 1PCSNChannel PQFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a PQFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 16A;55A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.6mΩ@20A,10V
  • Power Dissipation (Pd): 2.7W;33W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@25uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.45nF@25V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFHM8330TRPBF

Model NumberIRFHM8330TRPBF
Model NameInfineon Technologies IRFHM8330TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 6.6mΩ@20A,10V 2.35V@25uA 1PCSNChannel PQFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)16A;55A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.6mΩ@20A,10V
Power Dissipation (Pd)2.7W;33W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@25uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.45nF@25V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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