IRFHM8342TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFHM8342TRPBF is a IRFHM8342TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 16mΩ@17A,10V 2.35V@25uA 1PCSNChannel PQFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a PQFN-8(3.3x3.3) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 10A;28A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@17A,10V
  • Power Dissipation (Pd): 2.6W;20W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@25uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 560pF@25V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFHM8342TRPBF

Model NumberIRFHM8342TRPBF
Model NameInfineon Technologies IRFHM8342TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 16mΩ@17A,10V 2.35V@25uA 1PCSNChannel PQFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-8(3.3x3.3)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)10A;28A
Drain Source On Resistance (RDS(on)@Vgs,Id)16mΩ@17A,10V
Power Dissipation (Pd)2.6W;20W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@25uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)560pF@25V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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