IRFHS8342TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFHS8342TRPBF is a IRFHS8342TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 16mΩ@8.5A,10V 2.1W 2.35V@25uA 1PCSNChannel PQFN-6(2x2) MOSFETs ROHS. This product comes in a PQFN-6(2x2) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8.8A;19A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@8.5A,10V
  • Power Dissipation (Pd): 2.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@25uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 600pF@25V
  • Total Gate Charge (Qg@Vgs): 8.7nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.04 grams.

Full Specifications of IRFHS8342TRPBF

Model NumberIRFHS8342TRPBF
Model NameInfineon Technologies IRFHS8342TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 16mΩ@8.5A,10V 2.1W 2.35V@25uA 1PCSNChannel PQFN-6(2x2) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.040 grams / 0.001411 oz
Package / CasePQFN-6(2x2)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)8.8A;19A
Drain Source On Resistance (RDS(on)@Vgs,Id)16mΩ@8.5A,10V
Power Dissipation (Pd)2.1W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@25uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)600pF@25V
Total Gate Charge (Qg@Vgs)8.7nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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