IRFI1010NPBF-IR by Infineon Technologies – Specifications

Infineon Technologies IRFI1010NPBF-IR is a IRFI1010NPBF-IR from Infineon Technologies, part of the MOSFETs. It is designed for 55V 49A 12mΩ@26A,10V 58W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 49A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@26A,10V
  • Power Dissipation (Pd): 58W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.9nF@25V
  • Total Gate Charge (Qg@Vgs): 130nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRFI1010NPBF-IR

Full Specifications of IRFI1010NPBF-IR

Model NumberIRFI1010NPBF-IR
Model NameInfineon Technologies IRFI1010NPBF-IR
CategoryMOSFETs
BrandInfineon Technologies
Description55V 49A 12mΩ@26A,10V 58W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)49A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@26A,10V
Power Dissipation (Pd)58W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.9nF@25V
Total Gate Charge (Qg@Vgs)130nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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