IRFI1310NPBF by Infineon Technologies – Specifications

Infineon Technologies IRFI1310NPBF is a IRFI1310NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 24A 56W 36mΩ@10V,13A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 24A
  • Power Dissipation (Pd): 56W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@10V,13A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.9nF@25V
  • Total Gate Charge (Qg@Vgs): 120nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

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Full Specifications of IRFI1310NPBF

Model NumberIRFI1310NPBF
Model NameInfineon Technologies IRFI1310NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 24A 56W 36mΩ@10V,13A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)24A
Power Dissipation (Pd)56W
Drain Source On Resistance (RDS(on)@Vgs,Id)36mΩ@10V,13A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.9nF@25V
Total Gate Charge (Qg@Vgs)120nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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