IRFL014NPBF by Infineon Technologies – Specifications

Infineon Technologies IRFL014NPBF is a IRFL014NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 1.9A 1W 160mΩ@1.9A,10V 4V@250uA 1PCSNChannel SOT-223 MOSFETs ROHS. This product comes in a SOT-223 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 1.9A
  • Power Dissipation (Pd): 1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@1.9A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 190pF@25V
  • Total Gate Charge (Qg@Vgs): 11nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFL014NPBF

Model NumberIRFL014NPBF
Model NameInfineon Technologies IRFL014NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description55V 1.9A 1W 160mΩ@1.9A,10V 4V@250uA 1PCSNChannel SOT-223 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-223
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)1.9A
Power Dissipation (Pd)1W
Drain Source On Resistance (RDS(on)@Vgs,Id)160mΩ@1.9A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)190pF@25V
Total Gate Charge (Qg@Vgs)11nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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