IRFP250NPBF by Infineon Technologies – Specifications

Infineon Technologies IRFP250NPBF is a IRFP250NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 30A 75mΩ@10V,18A 214W 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS. This product comes in a TO-247AC-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@10V,18A
  • Power Dissipation (Pd): 214W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.159nF@25V
  • Total Gate Charge (Qg@Vgs): 123nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.16 grams.

Full Specifications of IRFP250NPBF

Model NumberIRFP250NPBF
Model NameInfineon Technologies IRFP250NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 30A 75mΩ@10V,18A 214W 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.160 grams / 0.252562 oz
Package / CaseTO-247AC-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)75mΩ@10V,18A
Power Dissipation (Pd)214W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.159nF@25V
Total Gate Charge (Qg@Vgs)123nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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