Infineon Technologies IRFP3415PBF is a IRFP3415PBF from Infineon Technologies, part of the MOSFETs. It is designed for 150V 43A 42mΩ@10V,22A 200W 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS. This product comes in a TO-247AC-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 43A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 42mΩ@10V,22A
- Power Dissipation (Pd): 200W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.4nF@25V
- Total Gate Charge (Qg@Vgs): 200nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.2 grams.
More on IRFP3415PBF
Full Specifications of IRFP3415PBF
Model Number | IRFP3415PBF |
Model Name | Infineon Technologies IRFP3415PBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 150V 43A 42mΩ@10V,22A 200W 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 8.200 grams / 0.289247 oz |
Package / Case | TO-247AC-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 150V |
Continuous Drain Current (Id) | 43A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 42mΩ@10V,22A |
Power Dissipation (Pd) | 200W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.4nF@25V |
Total Gate Charge (Qg@Vgs) | 200nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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