IRFP3415PBF by Infineon Technologies – Specifications

Infineon Technologies IRFP3415PBF is a IRFP3415PBF from Infineon Technologies, part of the MOSFETs. It is designed for 150V 43A 42mΩ@10V,22A 200W 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS. This product comes in a TO-247AC-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 43A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 42mΩ@10V,22A
  • Power Dissipation (Pd): 200W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.4nF@25V
  • Total Gate Charge (Qg@Vgs): 200nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.2 grams.

Full Specifications of IRFP3415PBF

Model NumberIRFP3415PBF
Model NameInfineon Technologies IRFP3415PBF
CategoryMOSFETs
BrandInfineon Technologies
Description150V 43A 42mΩ@10V,22A 200W 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.200 grams / 0.289247 oz
Package / CaseTO-247AC-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)43A
Drain Source On Resistance (RDS(on)@Vgs,Id)42mΩ@10V,22A
Power Dissipation (Pd)200W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.4nF@25V
Total Gate Charge (Qg@Vgs)200nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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