IRFP3710PBF by Infineon Technologies – Specifications

Infineon Technologies IRFP3710PBF is a IRFP3710PBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 57A 200W 25mΩ@10V,28A 4V@250uA 1PCSNChannel TO-247AC MOSFETs ROHS. This product comes in a TO-247AC package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 57A
  • Power Dissipation (Pd): 200W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,28A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3nF@25V
  • Total Gate Charge (Qg@Vgs): 190nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.16 grams.

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Full Specifications of IRFP3710PBF

Model NumberIRFP3710PBF
Model NameInfineon Technologies IRFP3710PBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 57A 200W 25mΩ@10V,28A 4V@250uA 1PCSNChannel TO-247AC MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.160 grams / 0.252562 oz
Package / CaseTO-247AC
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)57A
Power Dissipation (Pd)200W
Drain Source On Resistance (RDS(on)@Vgs,Id)25mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3nF@25V
Total Gate Charge (Qg@Vgs)190nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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