IRFP4229PBF by Infineon Technologies – Specifications

Infineon Technologies IRFP4229PBF is a IRFP4229PBF from Infineon Technologies, part of the MOSFETs. It is designed for 250V 44A 46mΩ@10V,26A 310W 5V@250uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 44A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@10V,26A
  • Power Dissipation (Pd): 310W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.56nF@25V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -40℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.311 grams.

More on IRFP4229PBF

Full Specifications of IRFP4229PBF

Model NumberIRFP4229PBF
Model NameInfineon Technologies IRFP4229PBF
CategoryMOSFETs
BrandInfineon Technologies
Description250V 44A 46mΩ@10V,26A 310W 5V@250uA 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.311 grams / 0.257888 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)44A
Drain Source On Resistance (RDS(on)@Vgs,Id)46mΩ@10V,26A
Power Dissipation (Pd)310W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.56nF@25V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-40℃~+175℃@(Tj)

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