IRFP4668PBF by Infineon Technologies – Specifications

Infineon Technologies IRFP4668PBF is a IRFP4668PBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 130A 9.7mΩ@10V,81A 520W 5V@250uA 1PCSNChannel TO-247AC MOSFETs ROHS. This product comes in a TO-247AC package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 130A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.7mΩ@10V,81A
  • Power Dissipation (Pd): 520W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 10.72nF@50V
  • Total Gate Charge (Qg@Vgs): 241nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.2 grams.

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Full Specifications of IRFP4668PBF

Model NumberIRFP4668PBF
Model NameInfineon Technologies IRFP4668PBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 130A 9.7mΩ@10V,81A 520W 5V@250uA 1PCSNChannel TO-247AC MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.200 grams / 0.289247 oz
Package / CaseTO-247AC
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)130A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.7mΩ@10V,81A
Power Dissipation (Pd)520W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)10.72nF@50V
Total Gate Charge (Qg@Vgs)241nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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