IRFR1018EPBF by Infineon Technologies – Specifications

Infineon Technologies IRFR1018EPBF is a IRFR1018EPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 56A 110W 8.4mΩ@10V,47A 4V@100uA N Channel TO-252-2(DPAK) MOSFETs ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 56A
  • Power Dissipation (Pd): 110W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.4mΩ@10V,47A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.481 grams.

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Full Specifications of IRFR1018EPBF

Model NumberIRFR1018EPBF
Model NameInfineon Technologies IRFR1018EPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 56A 110W 8.4mΩ@10V,47A 4V@100uA N Channel TO-252-2(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.481 grams / 0.016967 oz
Package / CaseTO-252-2(DPAK)
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)56A
Power Dissipation (Pd)110W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.4mΩ@10V,47A
Gate Threshold Voltage (Vgs(th)@Id)4V@100uA
TypeN Channel

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