IRFR1018ETRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFR1018ETRPBF is a IRFR1018ETRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 56A 110W 8.4mΩ@10V,47A 4V@100uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as null. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 56A
  • Power Dissipation (Pd): 110W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.4mΩ@10V,47A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.29nF@50V
  • Total Gate Charge (Qg@Vgs): 69nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.39 grams.

Full Specifications of IRFR1018ETRPBF

Model NumberIRFR1018ETRPBF
Model NameInfineon Technologies IRFR1018ETRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 56A 110W 8.4mΩ@10V,47A 4V@100uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.390 grams / 0.013757 oz
Package / CaseTO-252
Package / Arrange
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)56A
Power Dissipation (Pd)110W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.4mΩ@10V,47A
Gate Threshold Voltage (Vgs(th)@Id)4V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.29nF@50V
Total Gate Charge (Qg@Vgs)69nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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