IRFR18N15DPBF by Infineon Technologies – Specifications

Infineon Technologies IRFR18N15DPBF is a IRFR18N15DPBF from Infineon Technologies, part of the MOSFETs. It is designed for 150V 18A 110W 125mΩ@11A,10V 5.5V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 18A
  • Power Dissipation (Pd): 110W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@11A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 900pF@25V
  • Total Gate Charge (Qg@Vgs): 43nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFR18N15DPBF

Model NumberIRFR18N15DPBF
Model NameInfineon Technologies IRFR18N15DPBF
CategoryMOSFETs
BrandInfineon Technologies
Description150V 18A 110W 125mΩ@11A,10V 5.5V@250uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)18A
Power Dissipation (Pd)110W
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@11A,10V
Gate Threshold Voltage (Vgs(th)@Id)5.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)900pF@25V
Total Gate Charge (Qg@Vgs)43nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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