IRFR3410TRLPBF by Infineon Technologies – Specifications

Infineon Technologies IRFR3410TRLPBF is a IRFR3410TRLPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 31A 39mΩ@18A,10V 4V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as null. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 31A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 39mΩ@18A,10V
  • Power Dissipation (Pd): 3W;110W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.69nF@25V
  • Total Gate Charge (Qg@Vgs): 56nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.505 grams.

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Full Specifications of IRFR3410TRLPBF

Model NumberIRFR3410TRLPBF
Model NameInfineon Technologies IRFR3410TRLPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 31A 39mΩ@18A,10V 4V@250uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.505 grams / 0.017813 oz
Package / CaseDPAK
Package / Arrange
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)31A
Drain Source On Resistance (RDS(on)@Vgs,Id)39mΩ@18A,10V
Power Dissipation (Pd)3W;110W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.69nF@25V
Total Gate Charge (Qg@Vgs)56nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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