IRFS3107PBF by Infineon Technologies – Specifications

Infineon Technologies IRFS3107PBF is a IRFS3107PBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 195A 3mΩ@140A,10V 370W 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 195A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3mΩ@140A,10V
  • Power Dissipation (Pd): 370W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.37nF@50V
  • Total Gate Charge (Qg@Vgs): 240nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFS3107PBF

Model NumberIRFS3107PBF
Model NameInfineon Technologies IRFS3107PBF
CategoryMOSFETs
BrandInfineon Technologies
Description75V 195A 3mΩ@140A,10V 370W 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)195A
Drain Source On Resistance (RDS(on)@Vgs,Id)3mΩ@140A,10V
Power Dissipation (Pd)370W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.37nF@50V
Total Gate Charge (Qg@Vgs)240nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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