IRFS31N20DTRLP by Infineon Technologies – Specifications

Infineon Technologies IRFS31N20DTRLP is a IRFS31N20DTRLP from Infineon Technologies, part of the MOSFETs. It is designed for 200V 31A 82mΩ@18A,10V 5.5V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as null. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 31A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 82mΩ@18A,10V
  • Power Dissipation (Pd): 3.1W;200W
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.37nF@25V
  • Total Gate Charge (Qg@Vgs): 107nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.826 grams.

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Full Specifications of IRFS31N20DTRLP

Model NumberIRFS31N20DTRLP
Model NameInfineon Technologies IRFS31N20DTRLP
CategoryMOSFETs
BrandInfineon Technologies
Description200V 31A 82mΩ@18A,10V 5.5V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.826 grams / 0.06441 oz
Package / CaseD2PAK
Package / Arrange
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)31A
Drain Source On Resistance (RDS(on)@Vgs,Id)82mΩ@18A,10V
Power Dissipation (Pd)3.1W;200W
Gate Threshold Voltage (Vgs(th)@Id)5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.37nF@25V
Total Gate Charge (Qg@Vgs)107nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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