IRFS4010TRRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFS4010TRRPBF is a IRFS4010TRRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 180A 375W 4.7mΩ@106A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 180A
  • Power Dissipation (Pd): 375W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7mΩ@106A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.575nF@50V
  • Total Gate Charge (Qg@Vgs): 215nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFS4010TRRPBF

Model NumberIRFS4010TRRPBF
Model NameInfineon Technologies IRFS4010TRRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 180A 375W 4.7mΩ@106A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)180A
Power Dissipation (Pd)375W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.7mΩ@106A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.575nF@50V
Total Gate Charge (Qg@Vgs)215nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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