IRFS59N10DPBF by Infineon Technologies – Specifications

Infineon Technologies IRFS59N10DPBF is a IRFS59N10DPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 59A 25mΩ@35.4A,10V 5.5V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 59A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@35.4A,10V
  • Power Dissipation (Pd): 3.8W;200W
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.45nF@25V
  • Total Gate Charge (Qg@Vgs): 114nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRFS59N10DPBF

Full Specifications of IRFS59N10DPBF

Model NumberIRFS59N10DPBF
Model NameInfineon Technologies IRFS59N10DPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 59A 25mΩ@35.4A,10V 5.5V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)59A
Drain Source On Resistance (RDS(on)@Vgs,Id)25mΩ@35.4A,10V
Power Dissipation (Pd)3.8W;200W
Gate Threshold Voltage (Vgs(th)@Id)5.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.45nF@25V
Total Gate Charge (Qg@Vgs)114nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IRFS59N10DPBF With Other 200 Models

Related Models - IRFS59N10DPBF Alternative

Scroll to Top