IRFS7430PBF by Infineon Technologies – Specifications

Infineon Technologies IRFS7430PBF is a IRFS7430PBF from Infineon Technologies, part of the MOSFETs. It is designed for 40V 195A 1.2mΩ@100A,10V 375W 3.9V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 195A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2mΩ@100A,10V
  • Power Dissipation (Pd): 375W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 14.24nF@25V
  • Total Gate Charge (Qg@Vgs): 460nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFS7430PBF

Model NumberIRFS7430PBF
Model NameInfineon Technologies IRFS7430PBF
CategoryMOSFETs
BrandInfineon Technologies
Description40V 195A 1.2mΩ@100A,10V 375W 3.9V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCN
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)195A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2mΩ@100A,10V
Power Dissipation (Pd)375W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)14.24nF@25V
Total Gate Charge (Qg@Vgs)460nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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