IRFS7537PBF by Infineon Technologies – Specifications

Infineon Technologies IRFS7537PBF is a IRFS7537PBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 173A 3.3mΩ@100A,10V 230W 3.7V@150uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 173A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.3mΩ@100A,10V
  • Power Dissipation (Pd): 230W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.02nF@25V
  • Total Gate Charge (Qg@Vgs): 210nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFS7537PBF

Model NumberIRFS7537PBF
Model NameInfineon Technologies IRFS7537PBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 173A 3.3mΩ@100A,10V 230W 3.7V@150uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)173A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.3mΩ@100A,10V
Power Dissipation (Pd)230W
Gate Threshold Voltage (Vgs(th)@Id)3.7V@150uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.02nF@25V
Total Gate Charge (Qg@Vgs)210nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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