IRFS7540PBF by Infineon Technologies – Specifications

Infineon Technologies IRFS7540PBF is a IRFS7540PBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 110A 160W 5.1mΩ@65A,10V 3.7V@100uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 110A
  • Power Dissipation (Pd): 160W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.1mΩ@65A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.555nF@25V
  • Total Gate Charge (Qg@Vgs): 130nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFS7540PBF

Model NumberIRFS7540PBF
Model NameInfineon Technologies IRFS7540PBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 110A 160W 5.1mΩ@65A,10V 3.7V@100uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)110A
Power Dissipation (Pd)160W
Drain Source On Resistance (RDS(on)@Vgs,Id)5.1mΩ@65A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.7V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.555nF@25V
Total Gate Charge (Qg@Vgs)130nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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