Infineon Technologies IRFSL38N20DPBF is a IRFSL38N20DPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 43A 54mΩ@10V,26A 300W 5V@250uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 43A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 54mΩ@10V,26A
- Power Dissipation (Pd): 300W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 73pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.9nF@25V
- Total Gate Charge (Qg@Vgs): 60nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRFSL38N20DPBF
Full Specifications of IRFSL38N20DPBF
Model Number | IRFSL38N20DPBF |
Model Name | Infineon Technologies IRFSL38N20DPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 200V 43A 54mΩ@10V,26A 300W 5V@250uA 1PCSNChannel TO-262-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-262-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 200V |
Continuous Drain Current (Id) | 43A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 54mΩ@10V,26A |
Power Dissipation (Pd) | 300W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 73pF@25V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.9nF@25V |
Total Gate Charge (Qg@Vgs) | 60nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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