IRFSL7530PBF by Infineon Technologies – Specifications

Infineon Technologies IRFSL7530PBF is a IRFSL7530PBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 195A 1.65mΩ@10V,100A 375W 3.7mV@250uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 195A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.65mΩ@10V,100A
  • Power Dissipation (Pd): 375W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 806pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 13.703nF@25V
  • Total Gate Charge (Qg@Vgs): 274nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFSL7530PBF

Model NumberIRFSL7530PBF
Model NameInfineon Technologies IRFSL7530PBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 195A 1.65mΩ@10V,100A 375W 3.7mV@250uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)195A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.65mΩ@10V,100A
Power Dissipation (Pd)375W
Gate Threshold Voltage (Vgs(th)@Id)3.7mV@250uA
Reverse Transfer Capacitance (Crss@Vds)806pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)13.703nF@25V
Total Gate Charge (Qg@Vgs)274nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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