Infineon Technologies IRFSL7762PBF is a IRFSL7762PBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 85A 140W 6.7mΩ@51A,10V 3.7V@100uA 1PCSNChannel TO-262 MOSFETs ROHS. This product comes in a TO-262 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 75V
- Continuous Drain Current (Id): 85A
- Power Dissipation (Pd): 140W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7mΩ@51A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.7V@100uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.44nF@25V
- Total Gate Charge (Qg@Vgs): 130nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRFSL7762PBF
Full Specifications of IRFSL7762PBF
Model Number | IRFSL7762PBF |
Model Name | Infineon Technologies IRFSL7762PBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 75V 85A 140W 6.7mΩ@51A,10V 3.7V@100uA 1PCSNChannel TO-262 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-262 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 75V |
Continuous Drain Current (Id) | 85A |
Power Dissipation (Pd) | 140W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.7mΩ@51A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 3.7V@100uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 4.44nF@25V |
Total Gate Charge (Qg@Vgs) | 130nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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