IRFSL7762PBF by Infineon Technologies – Specifications

Infineon Technologies IRFSL7762PBF is a IRFSL7762PBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 85A 140W 6.7mΩ@51A,10V 3.7V@100uA 1PCSNChannel TO-262 MOSFETs ROHS. This product comes in a TO-262 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 85A
  • Power Dissipation (Pd): 140W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7mΩ@51A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.44nF@25V
  • Total Gate Charge (Qg@Vgs): 130nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFSL7762PBF

Model NumberIRFSL7762PBF
Model NameInfineon Technologies IRFSL7762PBF
CategoryMOSFETs
BrandInfineon Technologies
Description75V 85A 140W 6.7mΩ@51A,10V 3.7V@100uA 1PCSNChannel TO-262 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)85A
Power Dissipation (Pd)140W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.7mΩ@51A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.7V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.44nF@25V
Total Gate Charge (Qg@Vgs)130nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IRFSL7762PBF With Other 200 Models

Related Models - IRFSL7762PBF Alternative

Scroll to Top