IRFU1010ZPBF by Infineon Technologies – Specifications

Infineon Technologies IRFU1010ZPBF is a IRFU1010ZPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 42A 140W 7.5mΩ@42A,10V 4V@100uA 1PCSNChannel IPAK(TO-251AA) MOSFETs ROHS. This product comes in a IPAK(TO-251AA) package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 42A
  • Power Dissipation (Pd): 140W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@42A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.84nF@25V
  • Total Gate Charge (Qg@Vgs): 95nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFU1010ZPBF

Model NumberIRFU1010ZPBF
Model NameInfineon Technologies IRFU1010ZPBF
CategoryMOSFETs
BrandInfineon Technologies
Description55V 42A 140W 7.5mΩ@42A,10V 4V@100uA 1PCSNChannel IPAK(TO-251AA) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseIPAK(TO-251AA)
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)42A
Power Dissipation (Pd)140W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@42A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.84nF@25V
Total Gate Charge (Qg@Vgs)95nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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