IRFU1018EPBF by Infineon Technologies – Specifications

Infineon Technologies IRFU1018EPBF is a IRFU1018EPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 56A 8.4mΩ@47A,10V 110W 4V@100uA 1PCSNChannel IPAK(TO-251AA) MOSFETs ROHS. This product comes in a IPAK(TO-251AA) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 56A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.4mΩ@47A,10V
  • Power Dissipation (Pd): 110W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.29nF@50V
  • Total Gate Charge (Qg@Vgs): 69nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFU1018EPBF

Model NumberIRFU1018EPBF
Model NameInfineon Technologies IRFU1018EPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 56A 8.4mΩ@47A,10V 110W 4V@100uA 1PCSNChannel IPAK(TO-251AA) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseIPAK(TO-251AA)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)56A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.4mΩ@47A,10V
Power Dissipation (Pd)110W
Gate Threshold Voltage (Vgs(th)@Id)4V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.29nF@50V
Total Gate Charge (Qg@Vgs)69nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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