Infineon Technologies IRFU220NPBF is a IRFU220NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 5A 600mΩ@10V,2.9A 43W 4V@250uA 1PCSNChannel TO-251(IPAK) MOSFETs ROHS. This product comes in a TO-251(IPAK) package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@10V,2.9A
- Power Dissipation (Pd): 43W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 300pF@25V
- Total Gate Charge (Qg@Vgs): 23nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.057 grams.
More on IRFU220NPBF
Full Specifications of IRFU220NPBF
Model Number | IRFU220NPBF |
Model Name | Infineon Technologies IRFU220NPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 200V 5A 600mΩ@10V,2.9A 43W 4V@250uA 1PCSNChannel TO-251(IPAK) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.057 grams / 0.037285 oz |
Package / Case | TO-251(IPAK) |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 200V |
Continuous Drain Current (Id) | 5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 600mΩ@10V,2.9A |
Power Dissipation (Pd) | 43W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 300pF@25V |
Total Gate Charge (Qg@Vgs) | 23nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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