IRFZ44ESPBF by Infineon Technologies – Specifications

Infineon Technologies IRFZ44ESPBF is a IRFZ44ESPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 48A 110W 23mΩ@29A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 48A
  • Power Dissipation (Pd): 110W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@29A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.36nF@25V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRFZ44ESPBF

Full Specifications of IRFZ44ESPBF

Model NumberIRFZ44ESPBF
Model NameInfineon Technologies IRFZ44ESPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 48A 110W 23mΩ@29A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)48A
Power Dissipation (Pd)110W
Drain Source On Resistance (RDS(on)@Vgs,Id)23mΩ@29A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.36nF@25V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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