Infineon Technologies IRFZ48NPBF is a IRFZ48NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 64A 14mΩ@10V,32A 130W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 64A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10V,32A
- Power Dissipation (Pd): 130W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.97nF@25V
- Total Gate Charge (Qg@Vgs): 81nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.75 grams.
More on IRFZ48NPBF
Full Specifications of IRFZ48NPBF
Model Number | IRFZ48NPBF |
Model Name | Infineon Technologies IRFZ48NPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 55V 64A 14mΩ@10V,32A 130W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.750 grams / 0.097003 oz |
Package / Case | TO-220AB |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 55V |
Continuous Drain Current (Id) | 64A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 14mΩ@10V,32A |
Power Dissipation (Pd) | 130W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.97nF@25V |
Total Gate Charge (Qg@Vgs) | 81nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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