IRG4BC10SD-SPBF by Infineon Technologies – Specifications

Infineon Technologies IRG4BC10SD-SPBF is a IRG4BC10SD-SPBF from Infineon Technologies, part of the IGBTs. It is designed for 38W 14A 600V D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 815ns
  • Power Dissipation (Pd): 38W
  • Turn?on Delay Time (Td(on)): 76ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 14A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.8V@15V,8A
  • Total Gate Charge (Qg@Ic,Vge): 15nC
  • Diode Reverse Recovery Time (Trr): 28ns
  • Turn?off Switching Loss (Eoff): 3.28mJ
  • Turn?on Switching Loss (Eon): 0.31mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG4BC10SD-SPBF

Full Specifications of IRG4BC10SD-SPBF

Model NumberIRG4BC10SD-SPBF
Model NameInfineon Technologies IRG4BC10SD-SPBF
CategoryIGBTs
BrandInfineon Technologies
Description38W 14A 600V D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))815ns
Power Dissipation (Pd)38W
Turn?on Delay Time (Td(on))76ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)14A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.8V@15V,8A
Total Gate Charge (Qg@Ic,Vge)15nC
Diode Reverse Recovery Time (Trr)28ns
Turn?off Switching Loss (Eoff)3.28mJ
Turn?on Switching Loss (Eon)0.31mJ

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