IRG4BC20UDSTRRP by Infineon Technologies – Specifications

Infineon Technologies IRG4BC20UDSTRRP is a IRG4BC20UDSTRRP from Infineon Technologies, part of the IGBTs. It is designed for 60W 13A 600V D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 93ns
  • Power Dissipation (Pd): 60W
  • Turn?on Delay Time (Td(on)): 39ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 13A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,6.5A
  • Total Gate Charge (Qg@Ic,Vge): 27nC
  • Diode Reverse Recovery Time (Trr): 37ns
  • Turn?off Switching Loss (Eoff): 0.13mJ
  • Turn?on Switching Loss (Eon): 0.16mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG4BC20UDSTRRP

Full Specifications of IRG4BC20UDSTRRP

Model NumberIRG4BC20UDSTRRP
Model NameInfineon Technologies IRG4BC20UDSTRRP
CategoryIGBTs
BrandInfineon Technologies
Description60W 13A 600V D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))93ns
Power Dissipation (Pd)60W
Turn?on Delay Time (Td(on))39ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)13A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,6.5A
Total Gate Charge (Qg@Ic,Vge)27nC
Diode Reverse Recovery Time (Trr)37ns
Turn?off Switching Loss (Eoff)0.13mJ
Turn?on Switching Loss (Eon)0.16mJ

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