IRG4BC30FD1PBF by Infineon Technologies – Specifications

Infineon Technologies IRG4BC30FD1PBF is a IRG4BC30FD1PBF from Infineon Technologies, part of the IGBTs. It is designed for 100W 31A 600V TO-220AB IGBTs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 250ns
  • Power Dissipation (Pd): 100W
  • Turn?on Delay Time (Td(on)): 22ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 31A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.8V@15V,17A
  • Total Gate Charge (Qg@Ic,Vge): 57nC
  • Diode Reverse Recovery Time (Trr): 46ns
  • Turn?off Switching Loss (Eoff): 1.42mJ
  • Turn?on Switching Loss (Eon): 0.37mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG4BC30FD1PBF

Full Specifications of IRG4BC30FD1PBF

Model NumberIRG4BC30FD1PBF
Model NameInfineon Technologies IRG4BC30FD1PBF
CategoryIGBTs
BrandInfineon Technologies
Description100W 31A 600V TO-220AB IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))250ns
Power Dissipation (Pd)100W
Turn?on Delay Time (Td(on))22ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)31A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.8V@15V,17A
Total Gate Charge (Qg@Ic,Vge)57nC
Diode Reverse Recovery Time (Trr)46ns
Turn?off Switching Loss (Eoff)1.42mJ
Turn?on Switching Loss (Eon)0.37mJ

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