IRG4BC30FDPBF by Infineon Technologies – Specifications

Infineon Technologies IRG4BC30FDPBF is a IRG4BC30FDPBF from Infineon Technologies, part of the IGBTs. It is designed for 100W 31A 600V TO-220AB IGBTs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 230ns
  • Power Dissipation (Pd): 100W
  • Turn?on Delay Time (Td(on)): 42ns
  • Collector Current (Ic): 31A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.8V@15V,17A
  • Total Gate Charge (Qg@Ic,Vge): 51nC
  • Diode Reverse Recovery Time (Trr): 42ns
  • Turn?off Switching Loss (Eoff): 1.39mJ
  • Turn?on Switching Loss (Eon): 0.63mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG4BC30FDPBF

Full Specifications of IRG4BC30FDPBF

Model NumberIRG4BC30FDPBF
Model NameInfineon Technologies IRG4BC30FDPBF
CategoryIGBTs
BrandInfineon Technologies
Description100W 31A 600V TO-220AB IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))230ns
Power Dissipation (Pd)100W
Turn?on Delay Time (Td(on))42ns
Operating Temperature-
Collector Current (Ic)31A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.8V@15V,17A
Total Gate Charge (Qg@Ic,Vge)51nC
Diode Reverse Recovery Time (Trr)42ns
Turn?off Switching Loss (Eoff)1.39mJ
Turn?on Switching Loss (Eon)0.63mJ

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