IRG4IBC30UDPBF by Infineon Technologies – Specifications

Infineon Technologies IRG4IBC30UDPBF is a IRG4IBC30UDPBF from Infineon Technologies, part of the IGBTs. It is designed for 45W 17A 600V TO-220-3 IGBTs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 91ns
  • Power Dissipation (Pd): 45W
  • Turn?on Delay Time (Td(on)): 40ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 17A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,12A
  • Total Gate Charge (Qg@Ic,Vge): 50nC
  • Diode Reverse Recovery Time (Trr): 42ns
  • Turn?off Switching Loss (Eoff): 0.16mJ
  • Turn?on Switching Loss (Eon): 0.38mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRG4IBC30UDPBF

Model NumberIRG4IBC30UDPBF
Model NameInfineon Technologies IRG4IBC30UDPBF
CategoryIGBTs
BrandInfineon Technologies
Description45W 17A 600V TO-220-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))91ns
Power Dissipation (Pd)45W
Turn?on Delay Time (Td(on))40ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)17A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,12A
Total Gate Charge (Qg@Ic,Vge)50nC
Diode Reverse Recovery Time (Trr)42ns
Turn?off Switching Loss (Eoff)0.16mJ
Turn?on Switching Loss (Eon)0.38mJ

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