IRG4PC50UD-EPBF by Infineon Technologies – Specifications

Infineon Technologies IRG4PC50UD-EPBF is a IRG4PC50UD-EPBF from Infineon Technologies, part of the IGBTs. It is designed for 200W 55A 600V TO-247AC IGBTs ROHS. This product comes in a TO-247AC package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 140ns
  • Power Dissipation (Pd): 200W
  • Turn?on Delay Time (Td(on)): 46ns
  • Collector Current (Ic): 55A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,27A
  • Total Gate Charge (Qg@Ic,Vge): 180nC
  • Diode Reverse Recovery Time (Trr): 50ns
  • Turn?off Switching Loss (Eoff): 0.59mJ
  • Turn?on Switching Loss (Eon): 0.99mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG4PC50UD-EPBF

Full Specifications of IRG4PC50UD-EPBF

Model NumberIRG4PC50UD-EPBF
Model NameInfineon Technologies IRG4PC50UD-EPBF
CategoryIGBTs
BrandInfineon Technologies
Description200W 55A 600V TO-247AC IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AC
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))140ns
Power Dissipation (Pd)200W
Turn?on Delay Time (Td(on))46ns
Operating Temperature-
Collector Current (Ic)55A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,27A
Total Gate Charge (Qg@Ic,Vge)180nC
Diode Reverse Recovery Time (Trr)50ns
Turn?off Switching Loss (Eoff)0.59mJ
Turn?on Switching Loss (Eon)0.99mJ

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