IRG4PH40UDPBF by Infineon Technologies – Specifications

Infineon Technologies IRG4PH40UDPBF is a IRG4PH40UDPBF from Infineon Technologies, part of the IGBTs. It is designed for 160W 41A 1.2kV TO-247AC IGBTs ROHS. This product comes in a TO-247AC package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 97ns
  • Power Dissipation (Pd): 160W
  • Turn?on Delay Time (Td(on)): 46ns
  • Collector Current (Ic): 41A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.1V@15V,21A
  • Total Gate Charge (Qg@Ic,Vge): 86nC
  • Diode Reverse Recovery Time (Trr): 63ns
  • Turn?off Switching Loss (Eoff): 1.93mJ
  • Turn?on Switching Loss (Eon): 1.8mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG4PH40UDPBF

Full Specifications of IRG4PH40UDPBF

Model NumberIRG4PH40UDPBF
Model NameInfineon Technologies IRG4PH40UDPBF
CategoryIGBTs
BrandInfineon Technologies
Description160W 41A 1.2kV TO-247AC IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AC
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))97ns
Power Dissipation (Pd)160W
Turn?on Delay Time (Td(on))46ns
Operating Temperature-
Collector Current (Ic)41A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.1V@15V,21A
Total Gate Charge (Qg@Ic,Vge)86nC
Diode Reverse Recovery Time (Trr)63ns
Turn?off Switching Loss (Eoff)1.93mJ
Turn?on Switching Loss (Eon)1.8mJ

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