Infineon Technologies IRG4PSH71UDPBF is a IRG4PSH71UDPBF from Infineon Technologies, part of the IGBTs. It is designed for 350W 99A 1.2kV SUPER-247(TO-274AA) IGBTs ROHS. This product comes in a SUPER-247(TO-274AA) package and is sold as Bag-packed. Key features include:
- Power Dissipation (Pd): 350W
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 99A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Diode Reverse Recovery Time (Trr): 110ns
- Turn?off Switching Loss (Eoff): 9.4mJ
- Turn?on Switching Loss (Eon): 8.8mJ
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRG4PSH71UDPBF
Full Specifications of IRG4PSH71UDPBF
Model Number | IRG4PSH71UDPBF |
Model Name | Infineon Technologies IRG4PSH71UDPBF |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 350W 99A 1.2kV SUPER-247(TO-274AA) IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SUPER-247(TO-274AA) |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Power Dissipation (Pd) | 350W |
Operating Temperature | -55℃~+150℃@(Tj) |
Collector Current (Ic) | 99A |
Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
Input Capacitance (Cies@Vce) | - |
Type | - |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
Diode Reverse Recovery Time (Trr) | 110ns |
Turn?off Switching Loss (Eoff) | 9.4mJ |
Turn?on Switching Loss (Eon) | 8.8mJ |
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