IRG6B330UDPBF by Infineon Technologies – Specifications

Infineon Technologies IRG6B330UDPBF is a IRG6B330UDPBF from Infineon Technologies, part of the IGBTs. It is designed for 160W 70A 330V TO-220AB IGBTs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 176ns
  • Power Dissipation (Pd): 160W
  • Turn?on Delay Time (Td(on)): 47ns
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 70A
  • Collector-Emitter Breakdown Voltage (Vces): 330V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.76V@15V,120A
  • Total Gate Charge (Qg@Ic,Vge): 85nC
  • Diode Reverse Recovery Time (Trr): 60ns

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG6B330UDPBF

Full Specifications of IRG6B330UDPBF

Model NumberIRG6B330UDPBF
Model NameInfineon Technologies IRG6B330UDPBF
CategoryIGBTs
BrandInfineon Technologies
Description160W 70A 330V TO-220AB IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))176ns
Power Dissipation (Pd)160W
Turn?on Delay Time (Td(on))47ns
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)70A
Collector-Emitter Breakdown Voltage (Vces)330V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.76V@15V,120A
Total Gate Charge (Qg@Ic,Vge)85nC
Diode Reverse Recovery Time (Trr)60ns
Turn?on Switching Loss (Eon)-

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