IRG7PG42UD-EPBF by Infineon Technologies – Specifications

Infineon Technologies IRG7PG42UD-EPBF is a IRG7PG42UD-EPBF from Infineon Technologies, part of the IGBTs. It is designed for 320W 85A 1kV TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 229ns
  • Power Dissipation (Pd): 320W
  • Turn?on Delay Time (Td(on)): 25ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 85A
  • Collector-Emitter Breakdown Voltage (Vces): 1kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 157nC
  • Diode Reverse Recovery Time (Trr): 153ns
  • Turn?off Switching Loss (Eoff): 1.182mJ
  • Turn?on Switching Loss (Eon): 2.105mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG7PG42UD-EPBF

Full Specifications of IRG7PG42UD-EPBF

Model NumberIRG7PG42UD-EPBF
Model NameInfineon Technologies IRG7PG42UD-EPBF
CategoryIGBTs
BrandInfineon Technologies
Description320W 85A 1kV TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))229ns
Power Dissipation (Pd)320W
Turn?on Delay Time (Td(on))25ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)85A
Collector-Emitter Breakdown Voltage (Vces)1kV
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,30A
Total Gate Charge (Qg@Ic,Vge)157nC
Diode Reverse Recovery Time (Trr)153ns
Turn?off Switching Loss (Eoff)1.182mJ
Turn?on Switching Loss (Eon)2.105mJ

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