IRG7PH30K10DPBF by Infineon Technologies – Specifications

Infineon Technologies IRG7PH30K10DPBF is a IRG7PH30K10DPBF from Infineon Technologies, part of the IGBTs. It is designed for 180W 30A 1.2kV TO-247AC IGBTs ROHS. This product comes in a TO-247AC package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 110ns
  • Power Dissipation (Pd): 180W
  • Turn?on Delay Time (Td(on)): 14ns
  • Collector Current (Ic): 30A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.35V@15V,9A
  • Total Gate Charge (Qg@Ic,Vge): 45nC
  • Diode Reverse Recovery Time (Trr): 140ns
  • Turn?off Switching Loss (Eoff): 0.38mJ
  • Turn?on Switching Loss (Eon): 0.53mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG7PH30K10DPBF

Full Specifications of IRG7PH30K10DPBF

Model NumberIRG7PH30K10DPBF
Model NameInfineon Technologies IRG7PH30K10DPBF
CategoryIGBTs
BrandInfineon Technologies
Description180W 30A 1.2kV TO-247AC IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AC
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))110ns
Power Dissipation (Pd)180W
Turn?on Delay Time (Td(on))14ns
Operating Temperature-
Collector Current (Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.35V@15V,9A
Total Gate Charge (Qg@Ic,Vge)45nC
Diode Reverse Recovery Time (Trr)140ns
Turn?off Switching Loss (Eoff)0.38mJ
Turn?on Switching Loss (Eon)0.53mJ

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