IRG7PH35UD-EP by Infineon Technologies – Specifications

Infineon Technologies IRG7PH35UD-EP is a IRG7PH35UD-EP from Infineon Technologies, part of the IGBTs. It is designed for 180W 50A 1.2kV TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 160ns
  • Power Dissipation (Pd): 180W
  • Turn?on Delay Time (Td(on)): 30ns
  • Collector Current (Ic): 50A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,20A
  • Total Gate Charge (Qg@Ic,Vge): 85nC
  • Diode Reverse Recovery Time (Trr): 105ns
  • Turn?on Switching Loss (Eon): 1.06mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRG7PH35UD-EP

Model NumberIRG7PH35UD-EP
Model NameInfineon Technologies IRG7PH35UD-EP
CategoryIGBTs
BrandInfineon Technologies
Description180W 50A 1.2kV TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))160ns
Power Dissipation (Pd)180W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-
Collector Current (Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,20A
Total Gate Charge (Qg@Ic,Vge)85nC
Diode Reverse Recovery Time (Trr)105ns
Turn?on Switching Loss (Eon)1.06mJ

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