Infineon Technologies IRG7PH35UD-EP is a IRG7PH35UD-EP from Infineon Technologies, part of the IGBTs. It is designed for 180W 50A 1.2kV TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:
- Turn?off Delay Time (Td(off)): 160ns
- Power Dissipation (Pd): 180W
- Turn?on Delay Time (Td(on)): 30ns
- Collector Current (Ic): 50A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,20A
- Total Gate Charge (Qg@Ic,Vge): 85nC
- Diode Reverse Recovery Time (Trr): 105ns
- Turn?on Switching Loss (Eon): 1.06mJ
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRG7PH35UD-EP
Full Specifications of IRG7PH35UD-EP
Model Number | IRG7PH35UD-EP |
Model Name | Infineon Technologies IRG7PH35UD-EP |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 180W 50A 1.2kV TO-247-3 IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-247-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Turn?off Delay Time (Td(off)) | 160ns |
Power Dissipation (Pd) | 180W |
Turn?on Delay Time (Td(on)) | 30ns |
Operating Temperature | - |
Collector Current (Ic) | 50A |
Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
Type | - |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,20A |
Total Gate Charge (Qg@Ic,Vge) | 85nC |
Diode Reverse Recovery Time (Trr) | 105ns |
Turn?on Switching Loss (Eon) | 1.06mJ |
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