Infineon Technologies IRG7PH35UD1-EP is a IRG7PH35UD1-EP from Infineon Technologies, part of the IGBTs. It is designed for 179W 50A 1.2kV TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:
- Turn?off Delay Time (Td(off)): 160ns
- Power Dissipation (Pd): 179W
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 50A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,20A
- Total Gate Charge (Qg@Ic,Vge): 130nC
- Turn?off Switching Loss (Eoff): 0.62mJ
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRG7PH35UD1-EP
Full Specifications of IRG7PH35UD1-EP
Model Number | IRG7PH35UD1-EP |
Model Name | Infineon Technologies IRG7PH35UD1-EP |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 179W 50A 1.2kV TO-247AD IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-247AD |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Turn?off Delay Time (Td(off)) | 160ns |
Power Dissipation (Pd) | 179W |
Turn?on Delay Time (Td(on)) | - |
Operating Temperature | -55℃~+150℃@(Tj) |
Collector Current (Ic) | 50A |
Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
Input Capacitance (Cies@Vce) | - |
Type | - |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,20A |
Total Gate Charge (Qg@Ic,Vge) | 130nC |
Turn?off Switching Loss (Eoff) | 0.62mJ |
Turn?on Switching Loss (Eon) | - |
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