IRG7PH44K10D-EPBF by Infineon Technologies – Specifications

Infineon Technologies IRG7PH44K10D-EPBF is a IRG7PH44K10D-EPBF from Infineon Technologies, part of the IGBTs. It is designed for 320W 70A 1.2kV TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 315ns
  • Power Dissipation (Pd): 320W
  • Turn?on Delay Time (Td(on)): 75ns
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 70A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.4V@15V,25A
  • Total Gate Charge (Qg@Ic,Vge): 200nC
  • Diode Reverse Recovery Time (Trr): 130ns
  • Turn?off Switching Loss (Eoff): 1.3mJ
  • Turn?on Switching Loss (Eon): 2.1mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG7PH44K10D-EPBF

Full Specifications of IRG7PH44K10D-EPBF

Model NumberIRG7PH44K10D-EPBF
Model NameInfineon Technologies IRG7PH44K10D-EPBF
CategoryIGBTs
BrandInfineon Technologies
Description320W 70A 1.2kV TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))315ns
Power Dissipation (Pd)320W
Turn?on Delay Time (Td(on))75ns
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)70A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,25A
Total Gate Charge (Qg@Ic,Vge)200nC
Diode Reverse Recovery Time (Trr)130ns
Turn?off Switching Loss (Eoff)1.3mJ
Turn?on Switching Loss (Eon)2.1mJ

Compare Infineon Technologies - IRG7PH44K10D-EPBF With Other 200 Models

Related Models - IRG7PH44K10D-EPBF Alternative

Scroll to Top