IRG7PH50K10D-EPBF by Infineon Technologies – Specifications

Infineon Technologies IRG7PH50K10D-EPBF is a IRG7PH50K10D-EPBF from Infineon Technologies, part of the IGBTs. It is designed for 400W 90A 1.2kV TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 340ns
  • Power Dissipation (Pd): 400W
  • Turn?on Delay Time (Td(on)): 90ns
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 90A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.4V@15V,35A
  • Total Gate Charge (Qg@Ic,Vge): 300nC
  • Diode Reverse Recovery Time (Trr): 130ns
  • Turn?off Switching Loss (Eoff): 1.6mJ
  • Turn?on Switching Loss (Eon): 2.3mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG7PH50K10D-EPBF

Full Specifications of IRG7PH50K10D-EPBF

Model NumberIRG7PH50K10D-EPBF
Model NameInfineon Technologies IRG7PH50K10D-EPBF
CategoryIGBTs
BrandInfineon Technologies
Description400W 90A 1.2kV TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))340ns
Power Dissipation (Pd)400W
Turn?on Delay Time (Td(on))90ns
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)90A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,35A
Total Gate Charge (Qg@Ic,Vge)300nC
Diode Reverse Recovery Time (Trr)130ns
Turn?off Switching Loss (Eoff)1.6mJ
Turn?on Switching Loss (Eon)2.3mJ

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