IRG7PSH54K10DPBF by Infineon Technologies – Specifications

Infineon Technologies IRG7PSH54K10DPBF is a IRG7PSH54K10DPBF from Infineon Technologies, part of the IGBTs. It is designed for 520W 120A 1.2kV TO-274AA IGBTs ROHS. This product comes in a TO-274AA package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 490ns
  • Power Dissipation (Pd): 520W
  • Turn?on Delay Time (Td(on)): 110ns
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 120A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.4V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 435nC
  • Diode Reverse Recovery Time (Trr): 170ns
  • Turn?off Switching Loss (Eoff): 2.8mJ
  • Turn?on Switching Loss (Eon): 4.8mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRG7PSH54K10DPBF

Full Specifications of IRG7PSH54K10DPBF

Model NumberIRG7PSH54K10DPBF
Model NameInfineon Technologies IRG7PSH54K10DPBF
CategoryIGBTs
BrandInfineon Technologies
Description520W 120A 1.2kV TO-274AA IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-274AA
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))490ns
Power Dissipation (Pd)520W
Turn?on Delay Time (Td(on))110ns
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)120A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,50A
Total Gate Charge (Qg@Ic,Vge)435nC
Diode Reverse Recovery Time (Trr)170ns
Turn?off Switching Loss (Eoff)2.8mJ
Turn?on Switching Loss (Eon)4.8mJ

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