IRGB4059DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGB4059DPBF is a IRGB4059DPBF from Infineon Technologies, part of the IGBTs. It is designed for 56W 8A 600V TO-220AB IGBTs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 65ns
  • Power Dissipation (Pd): 56W
  • Turn?on Delay Time (Td(on)): 25ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 8A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.05V@15V,4A
  • Total Gate Charge (Qg@Ic,Vge): 13nC
  • Diode Reverse Recovery Time (Trr): 55ns
  • Turn?off Switching Loss (Eoff): 0.075mJ
  • Turn?on Switching Loss (Eon): 0.035mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGB4059DPBF

Full Specifications of IRGB4059DPBF

Model NumberIRGB4059DPBF
Model NameInfineon Technologies IRGB4059DPBF
CategoryIGBTs
BrandInfineon Technologies
Description56W 8A 600V TO-220AB IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))65ns
Power Dissipation (Pd)56W
Turn?on Delay Time (Td(on))25ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)8A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.05V@15V,4A
Total Gate Charge (Qg@Ic,Vge)13nC
Diode Reverse Recovery Time (Trr)55ns
Turn?off Switching Loss (Eoff)0.075mJ
Turn?on Switching Loss (Eon)0.035mJ

Compare Infineon Technologies - IRGB4059DPBF With Other 200 Models

Related Models - IRGB4059DPBF Alternative

Scroll to Top