IRGB4B60KD1PBF by Infineon Technologies – Specifications

Infineon Technologies IRGB4B60KD1PBF is a IRGB4B60KD1PBF from Infineon Technologies, part of the IGBTs. It is designed for 63W 11A 600V NPT(非穿通型) TO-220AB IGBTs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 100ns
  • Power Dissipation (Pd): 63W
  • Turn?on Delay Time (Td(on)): 22ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 11A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,4A
  • Total Gate Charge (Qg@Ic,Vge): 12nC
  • Diode Reverse Recovery Time (Trr): 93ns
  • Turn?off Switching Loss (Eoff): 0.047mJ
  • Turn?on Switching Loss (Eon): 0.073mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGB4B60KD1PBF

Full Specifications of IRGB4B60KD1PBF

Model NumberIRGB4B60KD1PBF
Model NameInfineon Technologies IRGB4B60KD1PBF
CategoryIGBTs
BrandInfineon Technologies
Description63W 11A 600V NPT(非穿通型) TO-220AB IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))100ns
Power Dissipation (Pd)63W
Turn?on Delay Time (Td(on))22ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)11A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@15V,4A
Total Gate Charge (Qg@Ic,Vge)12nC
Diode Reverse Recovery Time (Trr)93ns
Turn?off Switching Loss (Eoff)0.047mJ
Turn?on Switching Loss (Eon)0.073mJ

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