IRGIB15B60KD1P-IR by Infineon Technologies – Specifications

Infineon Technologies IRGIB15B60KD1P-IR is a IRGIB15B60KD1P-IR from Infineon Technologies, part of the IGBTs. It is designed for 52W 19A 600V TO-220-3 IGBTs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 173ns
  • Power Dissipation (Pd): 52W
  • Turn?on Delay Time (Td(on)): 30ns
  • Collector Current (Ic): 19A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,15A
  • Total Gate Charge (Qg@Ic,Vge): 84nC
  • Diode Reverse Recovery Time (Trr): 67ns
  • Turn?off Switching Loss (Eoff): 0.334mJ
  • Turn?on Switching Loss (Eon): 0.127mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGIB15B60KD1P-IR

Full Specifications of IRGIB15B60KD1P-IR

Model NumberIRGIB15B60KD1P-IR
Model NameInfineon Technologies IRGIB15B60KD1P-IR
CategoryIGBTs
BrandInfineon Technologies
Description52W 19A 600V TO-220-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))173ns
Power Dissipation (Pd)52W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-
Collector Current (Ic)19A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,15A
Total Gate Charge (Qg@Ic,Vge)84nC
Diode Reverse Recovery Time (Trr)67ns
Turn?off Switching Loss (Eoff)0.334mJ
Turn?on Switching Loss (Eon)0.127mJ

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