IRGIB6B60KDPBF by Infineon Technologies – Specifications

Infineon Technologies IRGIB6B60KDPBF is a IRGIB6B60KDPBF from Infineon Technologies, part of the IGBTs. It is designed for 38W 11A 600V NPT(非穿通型) TO-220-3 IGBTs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 38W
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 11A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Diode Reverse Recovery Time (Trr): 70ns
  • Turn?off Switching Loss (Eoff): 0.135mJ
  • Turn?on Switching Loss (Eon): 0.11mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGIB6B60KDPBF

Full Specifications of IRGIB6B60KDPBF

Model NumberIRGIB6B60KDPBF
Model NameInfineon Technologies IRGIB6B60KDPBF
CategoryIGBTs
BrandInfineon Technologies
Description38W 11A 600V NPT(非穿通型) TO-220-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)38W
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)11A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Diode Reverse Recovery Time (Trr)70ns
Turn?off Switching Loss (Eoff)0.135mJ
Turn?on Switching Loss (Eon)0.11mJ

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